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K6F8016R6D

512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F8016R6D Features

* Process Technology: Full CMOS

* Organization: 512K x16

* Power Supply Voltage: 1.65~1.95V

* Low Data Retention Voltage: 1.0V(Min)

* Three State Outputs

* Package Type: 48-FBGA-6.00x7.00 Preliminary CMOS SRAM www.DataSheet4U.com GENERAL DESCRIPTION T

K6F8016R6D General Description

The K6F8016R6D families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for battery back-up operatio.

K6F8016R6D Datasheet (180.02 KB)

Preview of K6F8016R6D PDF

Datasheet Details

Part number:

K6F8016R6D

Manufacturer:

Samsung semiconductor

File Size:

180.02 KB

Description:

512k x16 bit super low power and low voltage full cmos static ram.
K6F8016R6D Family Document Title Preliminary CMOS SRAM www.DataSheet4U.com 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revisi.

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K6F8016R6D 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Samsung semiconductor

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