K6F8016R6D Datasheet - Samsung semiconductor

K6F8016R6D 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

The K6F8016R6D families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for battery back-up operatio.

K6F8016R6D Family Document Title Preliminary CMOS SRAM www.DataSheet4U.com 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 0.1 Initial draft Revised - Updated DC parameters (ICC1, ICC2, ISB1, IDR) - Deleted 55ns Speed bin Draft Date April 26, 2004 September 13, 2004 Remark Preliminary Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specification.

K6F8016R6D_Samsungsemiconductor.pdf

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Datasheet Details

Part number:

K6F8016R6D

Manufacturer:

Samsung semiconductor

File Size:

180.02 KB

Description:

512k x16 bit super low power and low voltage full cmos static ram.

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K6F8016R6D K6F8016R6D 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Samsung semiconductor

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