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K6F8016R6D 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F8016R6D Description

K6F8016R6D Family Document Title Preliminary CMOS SRAM www.DataSheet4U.com 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revisi.
The K6F8016R6D families are fabricated by SAMSUNG′s advanced full CMOS process technology.

K6F8016R6D Features

* Process Technology: Full CMOS
* Organization: 512K x16
* Power Supply Voltage: 1.65~1.95V
* Low Data Retention Voltage: 1.0V(Min)
* Three State Outputs

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Datasheet Details

Part number
K6F8016R6D
Manufacturer
Samsung semiconductor
File Size
180.02 KB
Datasheet
K6F8016R6D_Samsungsemiconductor.pdf
Description
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

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Samsung semiconductor K6F8016R6D-like datasheet