K6F8016U6D Datasheet (Samsung semiconductor) - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F8016U6D, 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

The K6F8016U6D families are fabricated by SAMSUNG′s advanced full CMOS process technology.

The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design.

The families also support low data retention voltage for battery back-up operatio

K6F8016U6D Family Document Title CMOS SRAM www.DataSheet4U.com 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No.

History 0.0 0.1 Initial draft Revised - Updated DC parameters (ICC1, ICC2, ISB1, IDR) Finalized - Added Lead-Free Products.

Draft Date April 26, 2004 September 13, 2004 Remark Preliminary Preliminary 1.0 January 31, 2005 Final The attached datasheets are provided by SAMSUNG Electronics.

SAMSUNG Electronics CO., LTD.

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