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K6F8016U6

512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F8016U6 Features

* Process Technology: Full CMOS

* Organization: 512K x16

* Power Supply Voltage: 2.7~3.3V

* Low Data Retention Voltage: 1.5V(Min)

* Three State Outputs

* Package Type: 48-TBGA-6.00x7.00 CMOS SRAM 512K x 16 bit Super Low Power and Low Voltage Full CMO

K6F8016U6 General Description

The K6F8016U6B families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for battery back-up operatio.

K6F8016U6 Datasheet (157.38 KB)

Preview of K6F8016U6 PDF

Datasheet Details

Part number:

K6F8016U6

Manufacturer:

Samsung semiconductor

File Size:

157.38 KB

Description:

512k x16 bit super low power and low voltage full cmos static ram.
K6F8016U6B Family Document Title CMOS SRAM 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History .

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K6F8016U6 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Samsung semiconductor

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