K6F8016U6 Datasheet (Samsung semiconductor) - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F8016U6, 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

The K6F8016U6B families are fabricated by SAMSUNG′s advanced full CMOS process technology.

The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design.

The families also support low data retention voltage for battery back-up operatio

K6F8016U6B Family Document Title CMOS SRAM 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No.

History 0.0 Initial draft Draft Date July 24, 2001 Remark Preliminary 1.0 Finalize - ICC2 change : 30mA to 28mA for 55ns product 25mA to 22mA for 70ns product September 27, 2001 Final The attached datasheets are provided by SAMSUNG Electronics.

SAMSUNG Electronics CO., LTD.

reserve the right to change the specifications and products.

SAMSUNG Electro

K6F8016U6 Features

* Process Technology: Full CMOS

* Organization: 512K x16

* Power Supply Voltage: 2.7~3.3V

* Low Data Retention Voltage: 1.5V(Min)

* Three State Outputs

* Package Type: 48-TBGA-6.00x7.00 CMOS SRAM 512K x 16 bit Super Low Power and Low Voltage Full CMO