K6F8016U6 - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Samsung semiconductor

The K6F8016U6 by Samsung semiconductor is a 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM. Below is the official datasheet preview.

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K6F8016U6 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM by Samsung semiconductor - Datasheet Preview — Official preview page of the **K6F8016U6** 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM datasheet (Samsung semiconductor).

Datasheet Details

Part number	K6F8016U6
Manufacturer	Samsung semiconductor
File Size	157.38 KB
Description	512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Datasheet	K6F8016U6_Samsungsemiconductor.pdf
Additional preview pages of the K6F8016U6 datasheet.

K6F8016U6 Product details

Description

The K6F8016U6B families are fabricated by SAMSUNG′s advanced full CMOS process technology.

Features

Process Technology: Full CMOS.
Organization: 512K x16.
Power Supply Voltage: 2.7~3.3V.
Low Data Retention Voltage: 1.5V(Min).
Three State Outputs.
Package Type: 48-TBGA-6.00x7.00 CMOS SRAM 512K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM.

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Published: Apr 7, 2005 |