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K6F8016V3A

512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F8016V3A Features

* Process Technology: Full CMOS

* Organization: 512K x16

* Power Supply Voltage: 3.0~3.6V

* Low Data Retention Voltage: 1.5V(Min)

* Three State Outputs

* Package Type: 44-TSOP2-400F/R CMOS SRAM www.DataSheet4U.com GENERAL DESCRIPTION The K6F8016V3A fa

K6F8016V3A General Description

The K6F8016V3A families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support various operating temperature ranges. The families also support low data retention voltage for battery back-up operation with low data retention current. 512K x 16 bit Super Low Power and.

K6F8016V3A Datasheet (132.86 KB)

Preview of K6F8016V3A PDF

Datasheet Details

Part number:

K6F8016V3A

Manufacturer:

Samsung semiconductor

File Size:

132.86 KB

Description:

512k x16 bit super low power and low voltage full cmos static ram.
K6F8016V3A Family Document Title CMOS SRAM www.DataSheet4U.com 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History R.

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K6F8016V3A 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Samsung semiconductor

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