K6F8016R6B - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Samsung semiconductor

The K6F8016R6B by Samsung semiconductor is a 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM. Below is the official datasheet preview.

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K6F8016R6B 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM by Samsung semiconductor - Datasheet Preview — Official preview page of the **K6F8016R6B** 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM datasheet (Samsung semiconductor).

Datasheet Details

Part number	K6F8016R6B
Manufacturer	Samsung semiconductor
File Size	141.55 KB
Description	512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Datasheet	K6F8016R6B_Samsungsemiconductor.pdf
Additional preview pages of the K6F8016R6B datasheet.

K6F8016R6B Product details

Description

The K6F8016R6B families are fabricated by SAMSUNG′s advanced full CMOS process technology.

Features

Process Technology: Full CMOS.
Organization: 512K x16.
Power Supply Voltage: 1.65~2.2V.
Low Data Retention Voltage: 1.0V(Min).
Three State Outputs.
Package Type: 48-TBGA-6.00x7.00 CMOS SRAM www. DataSheet4U. com.

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Published: Apr 23, 2010 |