K6F8016R6B Datasheet, Ram, Samsung semiconductor

✔ K6F8016R6B Features

Process Technology: Full CMOS
Organization: 512K x16
Power Supply Voltage: 1.65~2.2V
Low Data Retention Voltage: 1.0V(Min)
Three State Outputs
Package Type: 4

PDF File Details

Samsung semiconductor manufacturer logo

Part number:

K6F8016R6B

Manufacturer:

Samsung semiconductor

File Size:

141.55 KB

Download:

📄 Datasheet

Description:

512k x16 bit super low power and low voltage full cmos static ram. The K6F8016R6B families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating

📥 Download PDF (141.55 KB)

📁 Related Datasheet

K6F8016R6A - CMOS SRAM (Samsung semiconductor)

K6F8016R6D - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM (Samsung semiconductor)

K6F8016T6C - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM (Samsung semiconductor)

K6F8016U6 - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM (Samsung semiconductor)

K6F8016U6D - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM (Samsung semiconductor)

K6F8016V3A - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM (Samsung semiconductor)

K6F1008R2M - SRAM (Samsung Electronics)

K6F1008S2M - SRAM (Samsung Electronics)

TAGS

K6F8016R6B 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Samsung semiconductor