K6F8016R6B 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Samsung semiconductor

Description

K6F8016R6B Family Document Title CMOS SRAM www.DataSheet4U.com 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History R.
The K6F8016R6B families are fabricated by SAMSUNG′s advanced full CMOS process technology.

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Datasheet Specifications

Part number: K6F8016R6B
Manufacturer: Samsung semiconductor
File Size: 141.55 KB
Datasheet: K6F8016R6B_Samsungsemiconductor.pdf
Description: 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Features

* Process Technology: Full CMOS
* Organization: 512K x16
* Power Supply Voltage: 1.65~2.2V
* Low Data Retention Voltage: 1.0V(Min)
* Three State Outputs

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K6F8016R6B 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Samsung semiconductor

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