K6F8016R6B Datasheet (Samsung semiconductor) - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F8016R6B, 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

The K6F8016R6B families are fabricated by SAMSUNG′s advanced full CMOS process technology.

The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design.

The families also support low data retention voltage for battery back-up operatio

K6F8016R6B Family Document Title CMOS SRAM www.DataSheet4U.com 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No.

History 0.0 Initial draft Draft Date July 25, 2001 Remark Preliminary 1.0 Finalize October 24, 2001 Final The attached datasheets are provided by SAMSUNG Electronics.

SAMSUNG Electronics CO., LTD.

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