K7A403609A Datasheet (Samsung semiconductor) - 128Kx36 & 256Kx18-Bit Synchronous Pipelined Burst SRAM

K7A403609A, 128Kx36 & 256Kx18-Bit Synchronous Pipelined Burst SRAM

K7A403609A K7A401809A 128Kx36 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev.

No History 0.0 Initial draft 0.1 Add tCYC 300MHz.

0.2 1.

Changed DC condition at Icc and ISB.

Icc ; from 540mA to 590mA at -30, from 490mA to 540mA at -27, from 440mA to 490mA at -25, from 410mA to 460mA at -22, from 390mA to 440mA at -20, from 370mA to 420mA at -18, ISB ; from 190mA to 200mA at -30, from 180mA to 190mA at -27, from 170mA to 180m