Description
FOR 512K x 32Bit x 4 Bank DDR SDRAM
The K4D623238 is 67,108,864 bits of hyper synchronous data rate Dynamic RAM organized as 2 x1,048,976 words by 32 bits, fabricated with SAMSUNG ’ s high performance CMOS technology.Synchronous
Features
- 2.5V + 5% power supply for device operation.
- VDD/VDDQ = 2.8V ± 5% for -33.
- VDD/VDDQ = 2.5V ± 5% for -60/-55/-50/-45/-40.
- SSTL_2 compatible inputs/outputs.
- 4 banks operation.
- MRS cycle with address key programs -. Read latency 3,4,5 (clock) -. Burst length (2, 4, 8 and Full page) -. Burst type (sequential & interleave).
- Full page burst length for sequential burst type only.
- Start address of the full page burst should be even.
K4D623238B-GC_Samsungsemiconductor.pdf
