* 2.5V + 5% power supply for device operation
* VDD/VDDQ = 2.8V ± 5% for -33
* VDD/VDDQ = 2.5V ± 5% for -60/-55/-50/-45/-40
* SSTL_2 compatible inputs/outputs
* 4 banks operation
* MRS cycle with address key programs -. Read latency 3,4,5 (clock) -. Bu
K4D623238B-GC Datasheet (147.36 KB)
K4D623238B-GC
Samsung
147.36 KB
64mbit ddr sdram.
K4D623238B-GC 64M DDR SDRAM 64Mbit DDR SDRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL (144-Ba.
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