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KM616FR1000 - 64K x 16-bit Super Low Power and Low Voltage Full CMOS Static RAM

This page provides the datasheet information for the KM616FR1000, a member of the KM616FV1000 64K x 16-bit Super Low Power and Low Voltage Full CMOS Static RAM family.

Datasheet Summary

Description

The KM616FV1000, KM616FS1000 and KM616FR1000 families are fabricated by SAMSUNG′s advanced Full CMOS process technology.

The families support various operating temperature ranges for user flexibility of system design.

Features

  • Process Technology : Full CMOS.
  • Organization : 64Kx16 bit.
  • Power Supply Voltage KM616FV1000 Family : 3.0V ~ 3.6V KM616FS1000 Family : 2.3V ~ 3.3V KM616FR1000 Family : 1.8V ~ 2.7V.
  • Low Data Retention Voltage : 1.5V(Min).
  • Three state output status and TTL Compatible.
  • Package Type : 44-TSOP2-400F.

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Datasheet preview – KM616FR1000

Datasheet Details

Part number KM616FR1000
Manufacturer Samsung
File Size 135.08 KB
Description 64K x 16-bit Super Low Power and Low Voltage Full CMOS Static RAM
Datasheet download datasheet KM616FR1000 Datasheet
Additional preview pages of the KM616FR1000 datasheet.

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Full PDF Text Transcription

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KM616FV1000, KM616FS1000, KM616FR1000 Family CMOS SRAM Document Title 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft 0.1 Revise - Erase 100ns part from KM616FS1000 Family - Add 150ns part on KM616FS1000 Family - Add 32-sTSOP1 new package - Add high power version ISB1=5.0µA(Max) - Change VDR(Min) 1.0 to 1.5V 1.0 Finalize - Concept change high power version to low low power version ISB1=5.0µA(Max) - Change super low power version with special handling ISB1=1.0µA(Max) - Reduce Icc & Icc1 Read : 15mA to 10mA Write : 25mA to 20mA 2.
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