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K4R271669A, K4R - 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM

K4R271669A Description

K4R271669A/K4R441869A Direct RDRAM™ 128/144Mbit RDRAM 256K x 16/18 bit x 2 *16 Dependent Banks Direct RDRAMTM Revision 1.02 January 2000 Page -.
Signal SIO1,SIO0 I/O I/O Type CMOSa # of Pins 2 Description Serial input/output.

K4R271669A Features

* for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can be used for additional storage and bandwidth or for error correction. Direct RDRAM™ SAMSUNG 001 K4Rxxxx69A-Nxxx SAMSUNG 001 K4R

K4R271669A Applications

* including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The 128/144Mbit Direct Rambus DRAMs (RDRAM®) are extremely high-speed CMOS DRAMs organized as 8M words by 16 or 18 bits. The use of Rambus Signaling Level (RSL) technology permits

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This datasheet PDF includes multiple part numbers: K4R271669A, K4R. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
K4R271669A, K4R
Manufacturer
Samsung semiconductor
File Size
Direct Link
Datasheet
K4R-2716.pdf
Description
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
Note
This datasheet PDF includes multiple part numbers: K4R271669A, K4R.
Please refer to the document for exact specifications by model.

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256K bit 2 *16 Dependent Banks Direct RDRAMTM Samsung semiconductor
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