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SW069R10VS Datasheet - Samwin

SW069R10VS N-channel MOSFET

This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. BVDSS : 100V ID : 57A RDS(ON) : 9.4mΩ@VG.

SW069R10VS Features

* N-channel Enhanced mode TO-220FTS MOSFET

* High ruggedness

* Low RDS(ON) (Typ 9.4mΩ)@VGS=4.5V (Typ 7.8mΩ)@VGS=10V

* Low Gate Charge (Typ 42nC)

* Improved dv/dt Capability

* 100% Avalanche Tested

* Application:Synchronous Rectification, Li Battery Protect Board, Inverter TO

SW069R10VS-Samwin.pdf