SW069R10VS
Samwin
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N-channel mosfet. This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characterist
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SW069R10VS - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
SW069R10VS
·FEATURES ·With TO-252(DPAK) packaging ·High speed switching ·Easy to use ·Low on .
SW06 - Quad SPST JFET Analog Switch
(Analog Devices)
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a
FEATURES Two Normally Open and Two Normally Closed SPST Switches with Disable Switches Can Be Easily Configured as a Dual SPDT .
SW065R68E7T - N-channel MOSFET
(Samwin)
SW065R68E7T
N-channel Enhanced mode TO-252 MOSFET
Features
TO-252
High ruggedness Low RDS(ON) (Typ 6.3mΩ)@VGS=10V Low Gate Charge (Typ 75nC).
SW068R08ET - N-channel MOSFET
(Samwin)
SW068R08ET
N-channel Enhanced mode TO-220/TO-263 MOSFET
Features
TO-220
TO-263
High ruggedness Low RDS(ON) (Typ 7.1mΩ)@VGS=10V Low Gate Cha.
SW036R10E8S - N-channel Enhanced mode TO-220/TO-263 MOSFET
(Samwin)
SW036R10E8S
N-channel Enhanced mode TO-220/TO-263 MOSFET
Features
TO-220
TO-263
⚫ High ruggedness
⚫ Low RDS(ON) (Typ 3.8mΩ)@VGS=10V ⚫ Low Gate C.
SW038R10ES - N-channel MOSFET
(Samwin)
SW038R10ES
N-channel Enhanced mode TO-247 MOSFET
Features
TO-247
High ruggedness Low RDS(ON) (Typ 3.6mΩ)@VGS=10V Low Gate Charge (Typ 132nC).
SW03B-V1 - Human body thermal release infrared sensing controller
(ASCHIP)
.
SW040R03VLT - N-channel Enhanced mode TO-252 MOSFET
(Samwin)
SW040R03VLT
N-channel Enhanced mode TO-252 MOSFET
Features
⚫ High ruggedness ⚫ Low RDS(ON) (Typ 5.1mΩ)@VGS=4.5V
(Typ 3.7mΩ)@VGS=10V ⚫ Low Gate Charg.
SW05-0311 - Match GaAs SPST Switch
(Tyco Electronics)
Match GaAs SPST Switch, DC - 3 GHz m o c with TTL/CMOS Control Input .
V 3.00
SW05-0311
w
w
a D . w
S a t
Features
e e h
U 4 t
CR-9
n Integ.
SW055R06E7T - N-channel MOSFET
(Samwin)
SW055R06E7T
N-channel Enhanced mode TO-220 MOSFET
Features
TO-220
⚫ High ruggedness
⚫ Low RDS(ON) (Typ 5.2mΩ)@VGS=10V ⚫ Low Gate Charge (Typ 94nC.
