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SW040R03VLT Datasheet - Samwin

SW040R03VLT N-channel Enhanced mode TO-252 MOSFET

This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. BVDSS : 30V ID : 100A RDS(ON) : 5.1mΩ@VG.

SW040R03VLT Features

* High ruggedness

* Low RDS(ON) (Typ 5.1mΩ)@VGS=4.5V (Typ 3.7mΩ)@VGS=10V

* Low Gate Charge (Typ 59nC)

* Improved dv/dt Capability

* 100% Avalanche Tested

* Application:Synchronous Rectification, Li Battery Protect Board, Inverter TO-252 12 3 1. Gate 2.Drain 3.Source General

SW040R03VLT-Samwin.pdf

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Datasheet Details

Part number:

SW040R03VLT

Manufacturer:

Samwin

File Size:

539.31 KB

Description:

N-channel enhanced mode to-252 mosfet.

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SW040R03VLT SW040R03VLT N-channel Enhanced mode TO-252 MOSFET Samwin

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