SW036R10E8S
Samwin
538.81kb
N-channel enhanced mode to-220/to-263 mosfet. 1. Gate 2.Drain 3.Source This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET
TAGS
📁 Related Datasheet
SW038R10ES - N-channel MOSFET
(Samwin)
SW038R10ES
N-channel Enhanced mode TO-247 MOSFET
Features
TO-247
High ruggedness Low RDS(ON) (Typ 3.6mΩ)@VGS=10V Low Gate Charge (Typ 132nC).
SW03B-V1 - Human body thermal release infrared sensing controller
(ASCHIP)
.
SW040R03VLT - N-channel Enhanced mode TO-252 MOSFET
(Samwin)
SW040R03VLT
N-channel Enhanced mode TO-252 MOSFET
Features
⚫ High ruggedness ⚫ Low RDS(ON) (Typ 5.1mΩ)@VGS=4.5V
(Typ 3.7mΩ)@VGS=10V ⚫ Low Gate Charg.
SW05-0311 - Match GaAs SPST Switch
(Tyco Electronics)
Match GaAs SPST Switch, DC - 3 GHz m o c with TTL/CMOS Control Input .
V 3.00
SW05-0311
w
w
a D . w
S a t
Features
e e h
U 4 t
CR-9
n Integ.
SW055R06E7T - N-channel MOSFET
(Samwin)
SW055R06E7T
N-channel Enhanced mode TO-220 MOSFET
Features
TO-220
⚫ High ruggedness
⚫ Low RDS(ON) (Typ 5.2mΩ)@VGS=10V ⚫ Low Gate Charge (Typ 94nC.
SW055R68E7T - N-channel MOSFET
(Samwin)
SW055R68E7T
Features
N-channel Enhanced mode TO-220/TO-263 MOSFET
High ruggedness Low RDS(ON) (Typ 5.6mΩ)@VGS=10V Low Gate Charge (Typ 94nC) .
SW058R72E7T - N-channel MOSFET
(Samwin)
SW058R72E7T
N-channel Enhanced mode TO-220 MOSFET
Features
TO-220
High ruggedness
Low RDS(ON) (Typ 6.3mΩ)@VGS=10V Low Gate Charge (Typ 107n.
SW05P - PIANO SWITCH
(AUK)
w
w
at .D w
aS
he
et
4U
o .c
m
w
w
w
at .D
aS
he
4U et
.c
om
SW05P
w
w
w
.D
at
aS
he
et
4U
o .c
m
.
SW05P-K - PIANO SWITCH
(AUK)
w
w
at .D w
aS
he
et
4U
o .c
m
w
w
w
at .D
SW05P-K
aS
he
4U et
.c
om
w
w
w
.D
at
aS
he
et
4U
o .c
m
.
SW05R-RD - SLIDE SWITCH
(AUK)
w
w
at .D w
aS
he
et
4U
o .c
m
w
w
w
at .D
SW05SR-RD
aS
he
4U et
.c
om
w
w
w
.D
at
aS
he
et
4U
o .c
m
.
