SW055R06E7T
Samwin
573.89kb
N-channel mosfet. 12 3 1. Gate 2.Drain 3.Source This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power M
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(Samwin)
SW055R68E7T
Features
N-channel Enhanced mode TO-220/TO-263 MOSFET
High ruggedness Low RDS(ON) (Typ 5.6mΩ)@VGS=10V Low Gate Charge (Typ 94nC) .
SW05-0311 - Match GaAs SPST Switch
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Match GaAs SPST Switch, DC - 3 GHz m o c with TTL/CMOS Control Input .
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SW05-0311
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CR-9
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SW058R72E7T
N-channel Enhanced mode TO-220 MOSFET
Features
TO-220
High ruggedness
Low RDS(ON) (Typ 6.3mΩ)@VGS=10V Low Gate Charge (Typ 107n.
SW05P - PIANO SWITCH
(AUK)
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SW05P
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SW05P-K - PIANO SWITCH
(AUK)
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SW05R-RD - SLIDE SWITCH
(AUK)
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SW05SR-RD
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SW05S - SLIDE SWITCH
(AUK)
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SW05S
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SW036R10E8S - N-channel Enhanced mode TO-220/TO-263 MOSFET
(Samwin)
SW036R10E8S
N-channel Enhanced mode TO-220/TO-263 MOSFET
Features
TO-220
TO-263
⚫ High ruggedness
⚫ Low RDS(ON) (Typ 3.8mΩ)@VGS=10V ⚫ Low Gate C.
SW038R10ES - N-channel MOSFET
(Samwin)
SW038R10ES
N-channel Enhanced mode TO-247 MOSFET
Features
TO-247
High ruggedness Low RDS(ON) (Typ 3.6mΩ)@VGS=10V Low Gate Charge (Typ 132nC).
SW03B-V1 - Human body thermal release infrared sensing controller
(ASCHIP)
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