SW055R68E7T Datasheet - Samwin

SW055R68E7T - N-channel MOSFET

Gate 2.Drain 3.Source This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

BVDSS : 68V ID

SW055R68E7T Features

* N-channel Enhanced mode TO-220/TO-263 MOSFET

* High ruggedness

* Low RDS(ON) (Typ 5.6mΩ)@VGS=10V

* Low Gate Charge (Typ 94nC)

* Improved dv/dt Capability

* 100% Avalanche Tested

* Application:Synchronous Rectification, Li Battery Protect Board, Inverter TO-220 TO-263 12

SW055R68E7T-Samwin.pdf

SW055R68E7T Datasheet Preview — Preview of SW055R68E7T PDF

Datasheet Details

Part number:

SW055R68E7T

Manufacturer:

Samwin

File Size:

816.28 KB

Description:

N-channel mosfet.

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SW055R68E7T N-channel MOSFET Samwin