SW055R68E7T Datasheet, Mosfet, Samwin

SW055R68E7T Features

  • Mosfet N-channel Enhanced mode TO-220/TO-263 MOSFET
  • High ruggedness
  • Low RDS(ON) (Typ 5.6mΩ)@VGS=10V
  • Low Gate Charge (Typ 94nC)
  • Improved dv/dt Capabili

PDF File Details

Part number:

SW055R68E7T

Manufacturer:

Samwin

File Size:

816.28kb

Download:

📄 Datasheet

Description:

N-channel mosfet. 1. Gate 2.Drain 3.Source This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET

Datasheet Preview: SW055R68E7T 📥 Download PDF (816.28kb)
Page 2 of SW055R68E7T Page 3 of SW055R68E7T

TAGS

SW055R68E7T
N-channel
MOSFET
Samwin

📁 Related Datasheet

SW055R06E7T - N-channel MOSFET (Samwin)
SW055R06E7T N-channel Enhanced mode TO-220 MOSFET Features TO-220 ⚫ High ruggedness ⚫ Low RDS(ON) (Typ 5.2mΩ)@VGS=10V ⚫ Low Gate Charge (Typ 94nC.

SW05-0311 - Match GaAs SPST Switch (Tyco Electronics)
Match GaAs SPST Switch, DC - 3 GHz m o c with TTL/CMOS Control Input . V 3.00 SW05-0311 w w a D . w S a t Features e e h U 4 t CR-9 n Integ.

SW058R72E7T - N-channel MOSFET (Samwin)
SW058R72E7T N-channel Enhanced mode TO-220 MOSFET Features TO-220  High ruggedness  Low RDS(ON) (Typ 6.3mΩ)@VGS=10V  Low Gate Charge (Typ 107n.

SW05P - PIANO SWITCH (AUK)
w w at .D w aS he et 4U o .c m w w w at .D aS he 4U et .c om SW05P w w w .D at aS he et 4U o .c m .

SW05P-K - PIANO SWITCH (AUK)
w w at .D w aS he et 4U o .c m w w w at .D SW05P-K aS he 4U et .c om w w w .D at aS he et 4U o .c m .

SW05R-RD - SLIDE SWITCH (AUK)
w w at .D w aS he et 4U o .c m w w w at .D SW05SR-RD aS he 4U et .c om w w w .D at aS he et 4U o .c m .

SW05S - SLIDE SWITCH (AUK)
w w at .D w aS he et 4U o .c m w w w at .D aS he 4U et .c om SW05S w w w .D at aS he et 4U o .c m .

SW036R10E8S - N-channel Enhanced mode TO-220/TO-263 MOSFET (Samwin)
SW036R10E8S N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 ⚫ High ruggedness ⚫ Low RDS(ON) (Typ 3.8mΩ)@VGS=10V ⚫ Low Gate C.

SW038R10ES - N-channel MOSFET (Samwin)
SW038R10ES N-channel Enhanced mode TO-247 MOSFET Features TO-247  High ruggedness  Low RDS(ON) (Typ 3.6mΩ)@VGS=10V  Low Gate Charge (Typ 132nC).

SW03B-V1 - Human body thermal release infrared sensing controller (ASCHIP)
.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts