Samwin Datasheet | Specifications & PDF Download

SW2604A PWM SW2604A、、,; , , 。 (85--265),12W,15W,18W。, DVD、、、、LCD。           、,、、 700V;, 10 ,, 、、 VCC 0.15W :DIP8       AC/

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www.DataSheet.co.kr SAMWIN SW3205 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.008 Ω)@VGS=10V ■ Gate Charge (Typ 146nC) ■ Improved

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SAMWIN TO-220F TO-220 SW7N65 N-channel MOSFET BVDSS : 650V ID : 7.0A RDS(ON) : 1.32ohm 1 2 1 3 2 2 3 1 3 Features ■ High ruggedness ■ RDS(ON) (Max 1

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SW2604 PWM SW2604、、,; , , 。 (85--265),12W,15W,18W。, DVD、、、、LCD。           、,、、 700V;, 10 ,, 、、 VCC 0.15W :DIP8       AC/DC

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SAMWIN General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 250 V : 0.45 ohm : 8.5 A : 28 nc

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SW10N65 N-channel Enhanced mode TO-220F/TO-220 MOSFET Features TO- 220F TO-220  High ruggedness  Low RDS(ON) (Typ 1Ω)@VGS=10V  Low Gate Charge

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SAMWIN General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 200 V : 0.4 ohm : 9.0 A : 26 nc

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w w w . D a t a S h e e t . c o . k r SAMWIN General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg

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SW2601A ჰш॥ᇅۚࣚ؇‫ޚ‬࿢Ĕ‫ޚ‬ੀ PWM ॥ᇅఖ ‫ۀ‬ඍ
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SAMWIN General Description Features zN-Channel MOSFET zBVDSS (Minimum) zRDS(ON) (Maximum) zID zQg (Typical) zPD (@TC=25 ℃) : 600 V : 5.0 ohm : 2.0 A :

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SW068R08ET N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263  High ruggedness  Low RDS(ON) (Typ 7.1mΩ)@VGS=10V  Low Gate Cha

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SAMWIN General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 200 V : 0.18 ohm : 18A : 40 nc :

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www.DataSheet.co.kr SAMWIN SW3N80 N-channel MOSFET BVDSS : 800V ID : 3.0A RDS(ON) : 4.5ohm 1 2 1 3 2 2 Features ■ High ruggedness ■ RDS(ON) (Max 4.

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SW22N65D N-channel Enhanced mode TO-247 MOSFET Features TO-247  High ruggedness  Low RDS(ON) (Typ 0.22Ω)@VGS=10V  Low Gate Charge (Typ 123nC) 

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SAMWIN SW4N80B N-channel TO-220F MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 4Ω)@VGS=10V ■ Gate Charge (Typical 14nC) ■ Improved dv/dt Capabil

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SAMWIN SW2N65B N-channel MOSFET Features TO-220F ■ High ruggedness ■ RDS(ON) (Max 5.6 Ω)@VGS=10V ■ Gate Charge (Typical 7.7nC) ■ Improved dv/dt C

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www.DataSheet4U.com SAMWIN General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 400 V : 0.5

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www.DataSheet4U.com SAMWIN Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ℃) : 600 V : 1 ohm : 7.0 A :

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SW040R03VLT N-channel Enhanced mode TO-252 MOSFET Features ⚫ High ruggedness ⚫ Low RDS(ON) (Typ 5.1mΩ)@VGS=4.5V (Typ 3.7mΩ)@VGS=10V ⚫ Low Gate Charg

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