Samwin Datasheet | Specifications & PDF Download

SW3205B N-channel Enhanced mode TO-220 MOSFET Features TO-220  High ruggedness  Low RDS(ON) (Typ 4.8mΩ)@VGS=10V  Low Gate Charge (Typ 80nC)  Im

(2 views)

www.DataSheet4U.com SAMWIN General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 500 V : 1.4

(2 views)

www.DataSheet4U.com SAMWIN General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 400 V : 0.5

(2 views)

www.DataSheet.co.kr SAMWIN SW30N06 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.036 Ω)@VGS=10V ■ Gate Charge (Typ 20nC) ■ Improved

(2 views)

www.DataSheet.co.kr SAMWIN SW3205 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.008 Ω)@VGS=10V ■ Gate Charge (Typ 146nC) ■ Improved

(2 views)

(2 views)

(2 views)

(2 views)

SAMWIN SW10N60 N-channel MOSFET BVDSS : 600V ID : 10.0A RDS(ON) : 0.75ohm 1 2 1 3 2 2 3 1 3 Features ■ High ruggedness ■ RDS(ON) (Max 0.75Ω)@VGS=10V

(2 views)

SAMWIN SW19N10 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.1Ω)@VGS=10V ■ Gate Charge (Typ 100nC) ■ Improved dv/dt Capability ■ 100%

(2 views)

SAMWIN SW2N65 N-channel MOSFET BVDSS : 650V ID : 2.0A RDS(ON) : 5.0ohm 2 1 2 1 3 2 3 1 Features ■ High ruggedness ■ RDS(ON) (Max 5.0 Ω)@VGS=10V ■ Ga

(2 views)

SW2658A PWM SW2658APWMMOSFET,24W、、 。 。, ,VDD(UVLO)、 (OVP)、 (OCP)、 (OLP) 。EMI.           :4ms H iccup Mode, :50KHz 0.15W ,(OLP)、

(2 views)

SW2604A PWM SW2604A、、,; , , 。 (85--265),12W,15W,18W。, DVD、、、、LCD。           、,、、 700V;, 10 ,, 、、 VCC 0.15W :DIP8       AC/

(2 views)

SW055R68E7T Features N-channel Enhanced mode TO-220/TO-263 MOSFET  High ruggedness  Low RDS(ON) (Typ 5.6mΩ)@VGS=10V  Low Gate Charge (Typ 94nC)

(2 views)

SAMWIN SW4N80B N-channel TO-220F MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 4Ω)@VGS=10V ■ Gate Charge (Typical 14nC) ■ Improved dv/dt Capabil

(1 views)

SAMWIN SW2N65B N-channel MOSFET Features TO-220F ■ High ruggedness ■ RDS(ON) (Max 5.6 Ω)@VGS=10V ■ Gate Charge (Typical 7.7nC) ■ Improved dv/dt C

(1 views)

SW2601A ჰш॥ᇅۚࣚ؇‫ޚ‬࿢Ĕ‫ޚ‬ੀ PWM ॥ᇅఖ ‫ۀ‬ඍ
൞၂ᇕۚྟି৖ཌൔ 18. ॥ᇅఖđᇶေႨႿᇏཬ‫ ੱۿ‬$ %$ ԉ‫׈‬ఖ ‫ބ‬ൡ஥ఖᇏb෱‫۽‬ቔႿჰшҐဢ‫ࢫטބ‬đॖസԢࠞࡗܻᯒ‫ ބ‬5- đః‫ޚ‬࿢‫ޚބ‬ ੀ॥ᇅหྟඪૼೂ༯๭bቋնൻԛ‫

(1 views)

SW3N80C N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features TO-220F TO-251 TO-252  High ruggedness  Low RDS(ON) (Typ 3.9Ω)@VGS=10V 

(1 views)

SAMWIN General Description Features zN-Channel MOSFET zBVDSS (Minimum) zRDS(ON) (Maximum) zID zQg (Typical) zPD (@TC=25 ℃) : 600 V : 5.0 ohm : 2.0 A :

(1 views)

www.DataSheet4U.com SAMWIN General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 500 V : 0.8

(1 views)