* Small noise figure : NF=1.5dB typ (f=0.9GHz).
* High power gain : MAG=14dB typ (f=0.9GHz).
* High cutoff frequency : fT=5GHz typ. Package Dimensions unit:mm 2004B [2SC3779] 5.0 4.0 4.0 0.45 0.5 0.45 0.44 0.6 2.0 14.0 5.0 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Pa
2SC3779
Sanyo Semicon Device
39.87 KB
Npn epitaxial planar silicon transistor.
Ordering number:ENN1954C NPN Epitaxial Planar Silicon Transistor 2SC3779 UHF Low-Noise Amplifier, Wide-Band Amplifier Applications Applications .
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