2SD1624 - PNP/NPN Epitaxial Planar Silicon Transistors

Sanyo Semicon Device

Datasheet Details

Adoption of FBET, MBIT processes.
Low collector-to-emitter saturation voltage.
Fast switching speed.
Large current capacity and wide ASO. 0.4 3 1.5 1.5 0.5 2 3.0 0.75 1 1.0 2.5 4.25max 0.4 ( ) : 2SB1124 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO.

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Other Datasheets by Sanyo Semicon Device

Published: Apr 3, 2005 |