2SD1981
Sanyo Semicon Device
148.32kb
Npn transistor.
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2SD198 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
isc Product Specification
2SD198
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min) ·Exce.
2SD198 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD198
..
DESCRIPTION ·With TO-3 package ·High breakd.
2SD1980 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·Darlington connection for high DC current gain ·Built in resistor between base and emitter ·Built in da.
2SD1980 - Power Transistor
(Rohm)
Power Transistor (100V, 2A)
2SD1980
Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Bu.
2SD1982 - NPN Transistor
(INCHANGE)
isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
2SD1982
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min) ·.
2SD1983 - NPN Transistor
(INCHANGE)
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1983
DESCRIPTION ·High DC Current Gain
: hFE= 4000(Min) @IC= 1A ·Low Collecto.
2SD1985 - Silicon NPN Transistor
(Panasonic Semiconductor)
Power Transistors
2SD1985, 2SD1985A
Silicon NPN triple diffusion planar type
For power amplification Complementary to 2SB1393 and 2SB1393A
s Feature.
2SD1985 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-220Fa package .. ·High forward curr.
2SD1985 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.) ·Good Linearity of hFE ·Low Collector Satura.
2SD1985A - Silicon NPN Transistor
(Panasonic Semiconductor)
Power Transistors
2SD1985, 2SD1985A
Silicon NPN triple diffusion planar type
For power amplification Complementary to 2SB1393 and 2SB1393A
s Feature.
