2SD1986 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD1986 .
High DC Current Gain- : hFE = 1000(Min)@ IC= 2A. Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min). Low Collector-Emitter Satura.

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2SD1986 Datasheet Preview — Preview of 2SD1986 PDF

Datasheet Specifications

Part number: 2SD1986
Manufacturer: INCHANGE
File Size: 181.42 KB
Datasheet: 2SD1986-INCHANGE.pdf
Description: NPN Transistor

Applications

* Switching applications.
* Hammer drive, pulse motor drive applications.
* Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Col

2SD1986 Distributors

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2SD1986 NPN Transistor INCHANGE

INCHANGE 2SD1986-like datasheet