Datasheet4U Logo Datasheet4U.com

2SD1986 - NPN Transistor

2SD1986 Description

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD1986 .
High DC Current Gain- : hFE = 1000(Min)@ IC= 2A. Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min). Low Collector-Emitter Satura.

2SD1986 Applications

* Switching applications.
* Hammer drive, pulse motor drive applications.
* Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Col

📥 Download Datasheet

Preview of 2SD1986 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SD1986
Manufacturer
INCHANGE
File Size
181.42 KB
Datasheet
2SD1986-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • 2SD1980 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • 2SD1981 - NPN Transistor (Sanyo Semicon Device)
  • 2SD1985 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD1985A - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD1902 - PNP/NPN Triple Diffused Planar Type Silicon Transistors (Sanyo Semicon Device)
  • 2SD1903 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SD1904 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SD1905 - Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE 2SD1986-like datasheet