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2SD1987 - NPN Transistor

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Part number 2SD1987
Manufacturer INCHANGE
File Size 183.60 KB
Description NPN Transistor
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High DC Current Gain- : hFE = 1000(Min)@ IC= 2A Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 3A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications. Hammer drive, pulse motor drive applications. Power amplifier applications.

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