Datasheet Details
- Part number
- 2SD1987
- Manufacturer
- INCHANGE
- File Size
- 183.60 KB
- Datasheet
- 2SD1987-INCHANGE.pdf
- Description
- NPN Transistor
2SD1987 Description
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1987 .
High DC Current Gain-
: hFE = 1000(Min)@ IC= 2A.
Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 60V(Min).
Low Collector-Emitter Satura.
2SD1987 Applications
* Switching applications.
* Hammer drive, pulse motor drive applications.
* Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Col
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