2SD1987 NPN Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1987 .
High DC Current Gain- : hFE = 1000(Min)@ IC= 2A. Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min). Low Collector-Emitter Satura.

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Datasheet Specifications

Part number: 2SD1987
Manufacturer: INCHANGE
File Size: 183.60 KB
Datasheet: 2SD1987-INCHANGE.pdf
Description: NPN Transistor

Applications

* Switching applications.
* Hammer drive, pulse motor drive applications.
* Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Col

2SD1987 Distributors

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2SD1987 NPN Transistor INCHANGE

INCHANGE 2SD1987-like datasheet