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2SD1983 - NPN Transistor

2SD1983 Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1983 .
High DC Current Gain : hFE= 4000(Min) @IC= 1A. Low Collector Saturation Voltgae- : VCE(sat)= 1. Incorporating a built-in.

2SD1983 Applications

* For low-frequency amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50-70 V VCEO Collector-Emitter Voltage 50-70 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICP Collector Current-Peak Collecto

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Datasheet Details

Part number
2SD1983
Manufacturer
INCHANGE
File Size
184.95 KB
Datasheet
2SD1983-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1983-like datasheet