2SD1983 NPN Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1983 .
High DC Current Gain : hFE= 4000(Min) @IC= 1A. Low Collector Saturation Voltgae- : VCE(sat)= 1. Incorporating a built-in.

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Datasheet Specifications

Part number: 2SD1983
Manufacturer: INCHANGE
File Size: 184.95 KB
Datasheet: 2SD1983-INCHANGE.pdf
Description: NPN Transistor

Applications

* For low-frequency amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50-70 V VCEO Collector-Emitter Voltage 50-70 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICP Collector Current-Peak Collecto

2SD1983 Distributors

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2SD1983 NPN Transistor INCHANGE

INCHANGE 2SD1983-like datasheet