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2SD1983 - NPN Transistor

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Part number 2SD1983
Manufacturer INCHANGE
File Size 184.95 KB
Description NPN Transistor
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Description

High DC Current Gain : hFE= 4000(Min) @IC= 1A Low Collector Saturation Voltgae- : VCE(sat)= 1.5V(Max.)@ IC= 1A Incorporating a built-in zener diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For low-frequency amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50-70 V VCEO Collector-Emitter Voltage 50-70 V VEBO Emitter-Base Voltage 5 V IC Collector

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