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2SD1988 - NPN Transistor

2SD1988 Description

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD1988 .
High DC Current Gain- : hFE = 3000(Min)@ IC= 1A. Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1. Incorporating.

2SD1988 Applications

* Low-frequency amplifications.
* Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40-50 V VCEO Collector-Emitter Voltage 40-50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM B

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Datasheet Details

Part number
2SD1988
Manufacturer
INCHANGE
File Size
183.76 KB
Datasheet
2SD1988-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1988-like datasheet