2SD1988 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD1988 .
High DC Current Gain- : hFE = 3000(Min)@ IC= 1A. Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1. Incorporating.

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2SD1988 Datasheet Preview — Preview of 2SD1988 PDF

Datasheet Specifications

Part number: 2SD1988
Manufacturer: INCHANGE
File Size: 183.76 KB
Datasheet: 2SD1988-INCHANGE.pdf
Description: NPN Transistor

Applications

* Low-frequency amplifications.
* Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40-50 V VCEO Collector-Emitter Voltage 40-50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM B

2SD1988 Distributors

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2SD1988 NPN Transistor INCHANGE

INCHANGE 2SD1988-like datasheet