2SD1982 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD1982 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min). Low Collector Saturation Voltage. High DC Current Gain. 100% avalanche te.

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Datasheet Specifications

Part number: 2SD1982
Manufacturer: INCHANGE
File Size: 185.08 KB
Datasheet: 2SD1982-INCHANGE.pdf
Description: NPN Transistor

Applications

* Switching regulator
* General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dis

2SD1982 Distributors

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2SD1982 NPN Transistor INCHANGE

INCHANGE 2SD1982-like datasheet