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2SD1982 Datasheet - INCHANGE

2SD1982 NPN Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) *Low Collector Saturation Voltage *High DC Current Gain *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Switching regulator *General purpo.

2SD1982-INCHANGE.pdf

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Datasheet Details

Part number:

2SD1982

Manufacturer:

INCHANGE

File Size:

185.08 KB

Description:

Npn transistor.

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