Part number:
2SJ632
Manufacturer:
Sanyo Semicon Device
File Size:
64.14 KB
Description:
P channel mos silicon transistor.
* Package Dimensions unit : mm 2062A [2SJ632] 4.5 1.6 1.5 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 0.5 3 1.5 2 3.0 (Bottom view) 1 1.0 0.4 2.5 4.25max 0.4 0.75 1 : Gate 2 : Drain 3 : Source SANYO : PCP Specifications Absolute Maximum Ratings at T
2SJ632
Sanyo Semicon Device
64.14 KB
P channel mos silicon transistor.
📁 Related Datasheet
2SJ630 - General-Purpose Switching Device Applications
(Sanyo Semicon Device)
..
Ordering number : ENA0489
2SJ630
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
2SJ630
Features
• • •
General-Purp.
2SJ633 - DC/DC Converter Applications
(Sanyo Semicon Device)
Ordering number : ENN7421
2SJ633
P-Channel Silicon MOSFET
2SJ633
DC / DC Converter Applications
Features
• • •
Package Dimensions
unit : mm 2083B
[.
2SJ634 - DC/ DC CONVERTER TRANSISTOR
(Sanyo Semicon Device)
2SJ634
No.
2SJ634
µ
µ µ
6.5 5.0 4
1.5
1.5
2.3
0.5
6.5 5.0 4
2.3 0.5
7.0
5.5
5.5
7.0
0.8 1.6
0.8
1.2 7.5 0.5
1 0.6
2
3
2.5
0..
2SJ635 - P-Channel Silicon MOSFET General-Purpose Switching Device Applications
(Sanyo Semicon Device)
Ordering number : ENN8277 ..
2SJ635
P-Channel Silicon MOSFET
2SJ635
Features
• • • •
General-Purpose Switching Device Application.
2SJ636 - 2SJ636
(Sanyo Semicon Device)
2SJ636
No.
2SJ636
µ
µ µ
6.5 5.0 4
1.5
1.5
2.3
0.5
6.5 5.0 4
2.3 0.5
7.0
5.5
5.5
7.0
0.8 1.6
0.8
1.2 7.5 0.5
1 0.6
2
3
2.5
0..
2SJ637 - DC/DC FOR CONVERTER
(Sanyo Semicon Device)
2SJ637
No.
2SJ637
µ
µ µ
6.5 5.0 4
1.5
1.5
2.3
0.5
6.5 5.0 4
2.3 0.5
7.0
5.5
5.5
7.0
0.8 1.6
0.8
1.2 7.5 0.5
1 0.6
2
3
2.5
0..
2SJ600 - SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
(NEC)
PRELIMINARY DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ600
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SJ600 is P-channel MOS F.
2SJ600 - MOSFET
(Kexin)
SMD Type
MOS Field Effect Transistor 2SJ600
Features
Low on-resistance RDS(on)1 = 50 m RDS(on)2 = 79m MAX. (VGS =-10 V, ID = -13 A) MAX. (VGS = -4.0 V.
