2SA1854 - PNP Epitaxial Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Adoption of FBET and MBIT processes.
Large allowable collector dissipation.
Low saturation voltage.
Large current capacity.
Fast switching speed.
Usage of radial taping to meet automatic mounting. Package Dimensions unit:mm 2084B [2SA1854] 1 : Emitter 2 : Collector 3 : Base Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Colletor Current (Pulse).

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Sanyo Semicon Device 2SA1854-like datasheet

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