2SA1855 - PNP/NPN Epitaxial Planar Silicon Transistors

Sanyo Semicon Device

Datasheet Details

Adoption of FBET and MBIT processes.
Large allowable collector dissipation.
Low saturation voltage.
Wide ASO and large current capacity.
Usage of radial taping to meet automatic mounting. Package Dimensions unit:mm 2084B [2SA1855/2SC4837] 4.5 10.5 1.9 1.2 2.6 1.4 1.0 8.5 ( ) : 2SA1855 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Colletor Cu.

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Sanyo Semicon Device 2SA1855-like datasheet

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