2SA1967 - NPN Triple Diffused Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

High breakdown voltage (VCEO min=.
900V).
Small Cob (Cob typ=2.2pF).
High reliability (Adoption of HVP process). Package Dimensions unit:mm 2010C [2SA1967] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristi.

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Sanyo Semicon Device 2SA1967-like datasheet

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