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SSQ04N65J

N-Channel MOSFET

SSQ04N65J Features

* High current rating Low RDS(ON) Lower capacitance Lower total gate charge Tighter VSD specifications Specified avalanche energy REF. A B C D E F G H Millimeter Min. Max. 10.010 10.350 3.735 3.935 2.590 2.890 12.060 12.460 1.170 1.370 0.710 0.910 13.400 13.800 2.540 TYP. REF. I J K L M N Q Millim

SSQ04N65J General Description

This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. It is designed for high voltage, high speed switching applications such as power supplies, con.

SSQ04N65J Datasheet (245.73 KB)

Preview of SSQ04N65J PDF

Datasheet Details

Part number:

SSQ04N65J

Manufacturer:

SeCoS

File Size:

245.73 KB

Description:

N-channel mosfet.
Elektronische Bauelemente SSQ04N65J 4A, 650V, RDS(ON) 3 Ω N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies .

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SSQ04N65J N-Channel MOSFET SeCoS

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