SSQ04N65J Datasheet - SeCoS

SSQ04N65J N-Channel MOSFET

This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. It is designed for high voltage, high speed switching applications such as power supplies, con.

SSQ04N65J Features

* High current rating Low RDS(ON) Lower capacitance Lower total gate charge Tighter VSD specifications Specified avalanche energy REF. A B C D E F G H Millimeter Min. Max. 10.010 10.350 3.735 3.935 2.590 2.890 12.060 12.460 1.170 1.370 0.710 0.910 13.400 13.800 2.540 TYP. REF. I J K L M N Q Millim

SSQ04N65J Datasheet (245.73 KB)