* RDS(on)≦11mΩ @VGS=10V RDS(on)≦14mΩ @VGS=4.5V High speed power switching, Logic Level Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested TO-220 Package MARKING 73N10SG Date Code 1 Gate 2 Drain 3 Source ABSOLUTE MAXIMUM RATINGS (TJ=25°C unless othe
SSQ73N10SG Datasheet (393.15 KB)
SSQ73N10SG
SeCoS
393.15 KB
N-channel enhancement mode power mosfet.
Elektronische Bauelemente
SSQ73 10SG
73A, 100V, RDS(O ) 11mΩ -Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies hal.
📁 Related Datasheet
SSQ-105-01-T-S HEADER CONNECTOR (Samtec)
SSQ-121LHT Slide Switches (Mitsumishi)
SSQ-121MHT Slide Switches (Mitsumishi)
SSQ-121MVT Slide Switches (Mitsumishi)
SSQ-122LHT Slide Switches (Mitsumishi)
SSQ-122MHT Slide Switches (Mitsumishi)
SSQ-122MVT Slide Switches (Mitsumishi)
SSQ-131MHT Slide Switches (Mitsumishi)
SSQ-131MVT Slide Switches (Mitsumishi)
SSQ-132MHT Slide Switches (Mitsumishi)
