SSQ73N10SG N-Channel Enhancement Mode Power MOSFET

SeCoS

Description

Elektronische Bauelemente SSQ73 10SG 73A, 100V, RDS(O ) 11mΩ -Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies hal.
The SSQ73N10SG is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for mos.

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Datasheet Specifications

Part number: SSQ73N10SG
Manufacturer: SeCoS
File Size: 393.15 KB
Datasheet: SSQ73N10SG-SeCoS.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* RDS(on)≦11mΩ @VGS=10V RDS(on)≦14mΩ @VGS=4.5V High speed power switching, Logic Level Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested TO-220 Package MARKING 73N10SG Date Code 1 Gate 2 Drain 3 Source ABSOLUTE MAXIMUM RATINGS (TJ=25°C unless othe

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SSQ73N10SG N-Channel Enhancement Mode Power MOSFET SeCoS

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