SSQ105N60SG N-Channel MOSFET

SeCoS

Description

Elektronische Bauelemente SSQ105 60SG 105A, 60V, RDS(O ) 5.3mΩ -Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies h.
The SSQ105N60SG is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for mo.

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Datasheet Specifications

Part number: SSQ105N60SG
Manufacturer: SeCoS
File Size: 437.98 KB
Datasheet: SSQ105N60SG-SeCoS.pdf
Description: N-Channel MOSFET

Features

* RDS(on)≦5.3mΩ @VGS=10V RDS(on)≦7.5mΩ @VGS=4.5V High speed power switching, Logic Level Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested TO-220 Package MARKING 105N60SG Date Code 1 Gate 2 Drain 3 Source ABSOLUTE MAXIMUM RATINGS (TJ=25°C unless o

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SSQ105N60SG N-Channel MOSFET SeCoS

SeCoS SSQ105N60SG-like datasheet