* RDS(on)≦8mΩ @VGS=10V RDS(on)≦11.1mΩ @VGS=4.5V High speed power switching, Logic Level Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested TO-220 Package MARKING 85N80SG Date Code 1 Gate 2 Drain 3 Source ABSOLUTE MAXIMUM RATINGS (TJ=25°C unless oth
SSQ85N80SG Datasheet (440.56 KB)
SSQ85N80SG
SeCoS
440.56 KB
N-channel enhancement mode power mosfet.
Elektronische Bauelemente
SSQ85 80SG
85A, 80V, RDS(O ) 8mΩ -Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halog.
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