SSQ182N45SG N-Ch Enhancement Mode Power MOSFET

SeCoS

Description

Elektronische Bauelemente SSQ182 45SG 182A, 45V, RDS(O ) 2.9mΩ -Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies h.
The SSQ182N45SG is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for mo.

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Datasheet Specifications

Part number: SSQ182N45SG
Manufacturer: SeCoS
File Size: 436.51 KB
Datasheet: SSQ182N45SG-SeCoS.pdf
Description: N-Ch Enhancement Mode Power MOSFET

Features

* RDS(on)≦2.9mΩ @VGS=10V RDS(on)≦4mΩ @VGS=4.5V High speed power switching, Logic Level Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested TO-220 Package MARKING 182N45SG Date Code 1 Gate 2 Drain 3 Source ABSOLUTE MAXIMUM RATINGS (TJ=25°C unless oth

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SSQ182N45SG N-Ch Enhancement Mode Power MOSFET SeCoS

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