* Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is characterized for The Use in Bridging Circuits IDSS and VDS(ON) Specified at Elevated Temperature REF. A B C D E F G H Millimeter Min. Max. 10.010 10
SSQ07N60J Datasheet (466.07 KB)
SSQ07N60J
SeCoS
466.07 KB
N-channel mosfet.
Elektronische Bauelemente
SSQ07N60J
7 A, 600 V, RDS(ON) 1.3 Ω N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specif.
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