SSQ07N60J N-Channel MOSFET

SeCoS

Description

Elektronische Bauelemente SSQ07N60J 7 A, 600 V, RDS(ON) 1.3 Ω N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specif.
The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

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Datasheet Specifications

Part number: SSQ07N60J
Manufacturer: SeCoS
File Size: 466.07 KB
Datasheet: SSQ07N60J-SeCoS.pdf
Description: N-Channel MOSFET

Features

* Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is characterized for The Use in Bridging Circuits IDSS and VDS(ON) Specified at Elevated Temperature REF. A B C D E F G H Millimeter Min. Max. 10.010 10

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SSQ07N60J N-Channel MOSFET SeCoS

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