SSQ07N60J Datasheet - SeCoS

SSQ07N60J N-Channel MOSFET

The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers .

SSQ07N60J Features

* Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is characterized for The Use in Bridging Circuits IDSS and VDS(ON) Specified at Elevated Temperature REF. A B C D E F G H Millimeter Min. Max. 10.010 10

SSQ07N60J Datasheet (466.07 KB)