STT3998N Datasheet - SeCoS

STT3998N, Dual N-Channel MOSFET

Elektronische Bauelemente STT3998N Dual N-Ch Enhancement Mode Mos.FET 3.7 A, 20 V, RDS(ON) 58 m RoHS Compliant Product A suffix of “-C” specifies h

Features

* Low RDS(on) provide higher efficiency and extends battery life.
* Low thermal impedance copper leadframe TSOP-6 saves board space.
* Fast switching speed.
* High performance trench technology. PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) 20 RDS(on) (m 58@VGS= 4.5V 82@VGS= 2.5V ID(

STT3998N-SeCoS.pdf