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STT3998N - Dual N-Channel MOSFET

STT3998N Description

Elektronische Bauelemente STT3998N Dual N-Ch Enhancement Mode Mos.FET 3.7 A, 20 V, RDS(ON) 58 m RoHS Compliant Product A suffix of “-C” specifies h.
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat diss.

STT3998N Features

* Low RDS(on) provide higher efficiency and extends battery life.
* Low thermal impedance copper leadframe TSOP-6 saves board space.
* Fast switching speed.
* High performance trench technology. PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) 20 RDS(on) (m 58@VGS= 4.5V 82@VGS= 2.5V ID(

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Datasheet Details

Part number
STT3998N
Manufacturer
SeCoS
File Size
155.82 KB
Datasheet
STT3998N-SeCoS.pdf
Description
Dual N-Channel MOSFET

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Dual N-Channel MOSFET SeCoS
SeCoS STT3998N-like datasheet