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STT3998N

Dual N-Channel MOSFET

STT3998N Features

* Low RDS(on) provide higher efficiency and extends battery life.

* Low thermal impedance copper leadframe TSOP-6 saves board space.

* Fast switching speed.

* High performance trench technology. PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) 20 RDS(on) (m 58@VGS= 4.5V 82@VGS= 2.5V ID(

STT3998N General Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA c.

STT3998N Datasheet (155.82 KB)

Preview of STT3998N PDF

Datasheet Details

Part number:

STT3998N

Manufacturer:

SeCoS

File Size:

155.82 KB

Description:

Dual n-channel mosfet.
Elektronische Bauelemente STT3998N Dual N-Ch Enhancement Mode Mos.FET 3.7 A, 20 V, RDS(ON) 58 m RoHS Compliant Product A suffix of “-C” specifies h.

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STT3998N Dual N-Channel MOSFET SeCoS

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