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STT3998N-C Dual N-Channel MOSFET

STT3998N-C Description

Elektronische Bauelemente STT3998N-C 4A, 20V, RDS(ON) 37mΩ Dual N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies.
The STT3998N-C is the highest performance trench Dual N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for.

STT3998N-C Features

* Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available PACKAGE INFORMATION Package MPQ TSOP-6 3K Leader Size 7 inch ORDER INFORMATION Part Number Type STT3998N-C Lead (Pb)-free and Halogen-free TSOP-6 A E L 654 B 123 F DG K C H J REF. A B C D E F

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Datasheet Details

Part number
STT3998N-C
Manufacturer
SeCoS
File Size
365.40 KB
Datasheet
STT3998N-C-SeCoS.pdf
Description
Dual N-Channel MOSFET

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Dual N-Channel MOSFET SeCoS
SeCoS STT3998N-C-like datasheet