* SIMPLIFIED AMPLIFIER DESIGN
* SUITABLE FOR BROAD BAND APPLICATIONS
* VERY LOW Crss
* SIMPLE BIAS CIRCUITS
* LOW NOISE
* HIGH GAIN
* 10 dB MINIMUM APPLICATIONS
* HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz PD BVDSS BVGSS ID(sat) Tst
D2290UK
Seme LAB
30.58 KB
Metal gate rf silicon fet.
TetraFET
D2290UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
Top View
E
4
3
1 F
B
DC 2
A
KL J
G
H
I
SOT143 PACKAGE
PIN 1
📁 Related Datasheet
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TetraFET
D2293UK
MECHANICAL DATA
A B C
H
I EF
ROHS COMPLIANT METAL GATE RF SILICON FET
O K
J
L
GOLD METALLISED MULTI-PURPOSE SILICON
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MECHANICAL DATA
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FEATU.
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D2294UK
Features:
• Simplified Amplifier Design • Suitable for Broad Band Applications • Low Crss • Simp.
D2200 - PNP/NPN Epitaxial Planar Silicon Transistors
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Ordering number:EN3151
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2SB1451/2SD2200
80V/5A Switching Applications
Features
· Surface mount type devi.
D2200N - Rectifier Diode
(Infineon)
N
Datenblatt / Data sheet
Netz-Gleichrichterdiode Rectifier Diode
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Technische Information / technical information
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D2201UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D2201UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
C
2 1 A
3
F (2 pls)
H J
N (typ)
B
D (2 pls)
MI
PIN 1 PIN 3
SOURCE GATE.
