* SIMPLIFIED AMPLIFIER DESIGN
* SUITABLE FOR BROAD BAND APPLICATIONS
* VERY LOW Crss
* SIMPLE BIAS CIRCUITS
* LOW NOISE
* HIGH GAIN
* 11 dB MINIMUM SOT 171 PIN 1 PIN 3 PIN 5 SOURCE GATE SOURCE PIN 2 PIN 4 PIN 6 SOURCE DRAIN SOURCE APPLICATION
D2294UK
Seme LAB
73.13 KB
Metal gate rf silicon fet.
TetraFET
D2294UK
METAL GATE RF SILICON FET
MECHANICAL DATA
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 15W
* 12.5V
* 500MHz SI.
📁 Related Datasheet
D2294UK - RF Silicon Mosfet
(TT)
RF Silicon Mosfet
15W 500MHz 12V Single-Ended
D2294UK
Features:
• Simplified Amplifier Design • Suitable for Broad Band Applications • Low Crss • Simp.
D2290UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D2290UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
Top View
E
4
3
1 F
B
DC 2
A
KL J
G
H
I
SOT143 PACKAGE
PIN 1 – .
D2293UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D2293UK
MECHANICAL DATA
A B C
H
I EF
ROHS COMPLIANT METAL GATE RF SILICON FET
O K
J
L
GOLD METALLISED MULTI-PURPOSE SILICON
DMOS RF FET.
D2200 - PNP/NPN Epitaxial Planar Silicon Transistors
(Sanyo)
Ordering number:EN3151
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1451/2SD2200
80V/5A Switching Applications
Features
· Surface mount type devi.
D2200N - Rectifier Diode
(Infineon)
N
Datenblatt / Data sheet
Netz-Gleichrichterdiode Rectifier Diode
D2200N
Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte /.
D2201 - PNP/NPN Epitaxial Planar Silicon Transistors
(Sanyo)
Ordering number:EN3152
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1452/2SD2201
80V/7A Switching Applications
Features
· Surface mount type devi.
D2201N - Crow Bar Diode
(Infineon)
Umschwingdiode Crow Bar Diode
Technische Information / technical information
D2201N
Key Parameters VRRM IFAVM IFSM VT0 rT RthJC Clamping Force Max. .
D2201UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D2201UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
C
2 1 A
3
F (2 pls)
H J
N (typ)
B
D (2 pls)
MI
PIN 1 PIN 3
SOURCE GATE.
