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SM1N60 - 600V N-Channel MOSFET

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Datasheet Details

Part number	SM1N60
Manufacturer	SemiMOS
File Size	392.76 KB
Description	600V N-Channel MOSFET
Datasheet	SM1N60-SemiMOS.pdf

SM1N60 Product details

Features

Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg=7.7nC (Typ. ).
BVDSS=600V,ID=1A.
RDS(on) : 8Ω (Max) @VG=10V.
100% Avalanche Tested Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 To.

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Published: Mar 30, 2025 |