BUZ12A
Siemens Semiconductor Group
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Power transistor.
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BUZ12 - Power Transistor
(Siemens Semiconductor Group)
BUZ 12
Not for new design
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 12
VDS
50.
BUZ12 - N-Channel MOSFET Transistor
(INCHANGE)
isc N-Channel Mosfet Transistor
BUZ12
·FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = 0.028Ω(Max) ·SOA is Power Dissipation Limited ·High i.
BUZ12A - N-Channel MOSFET
(INCHANGE)
isc N-Channel Mosfet Transistor
BUZ12A
·FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = 0.035Ω(Max) ·SOA is Power Dissipation Limited ·High .
BUZ12AL - Power Transistor
(Siemens Semiconductor Group)
BUZ 12 AL
Not for new design
SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level
Pin 1 G Type BUZ 12 AL
Pin 2 .
BUZ10 - N-Channel Power MOSFET
(STMicroelectronics)
®
BUZ10
N - CHANNEL 50V - 0.06Ω - 23A TO-220 STripFET™ MOSFET
T YPE BUZ 10
s s s s s
V DSS 50 V
R DS(o n) < 0.07 Ω
ID 23 A
TYPICAL RDS(on) = 0.0.
BUZ10 - Power Transistor
(Siemens Semiconductor Group)
BUZ 10
Not for new design
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 10
VDS
50.
BUZ10 - N-Channel MOSFET
(INCHANGE)
isc N-Channel Mosfet Transistor
·FEATURES ·Drain Current –ID=23A@ TC=25℃ ·Static Drain-Source On-Resistance
: RDS(on) = 0.07Ω(Max) ·175℃ operating te.
BUZ100 - Power Transistor
(Siemens Semiconductor Group)
BUZ 100
SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175°C operating temperat.
BUZ100 - N-Channel MOSFET
(INCHANGE)
isc N-Channel Mosfet Transistor
·FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = 0.018Ω(Max) ·Ultra low on-resistance ·Fast Switching ·175℃ o.
BUZ100L - Power Transistor
(Siemens Semiconductor Group)
BUZ 100L
SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Ultra low on-resistance • 175 °C op.
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