BUZ12AL Datasheet, Transistor, Siemens Semiconductor Group

PDF File Details

Part number:

BUZ12AL

Manufacturer:

Siemens Semiconductor Group

File Size:

119.84kb

Download:

📄 Datasheet

Description:

Power transistor.

TAGS

BUZ12AL

Siemens Semiconductor Group

📁 Related Datasheet

BUZ12A - Power Transistor (Siemens Semiconductor Group)
BUZ 12 A Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 12 A VD.

BUZ12A - N-Channel MOSFET (INCHANGE)
isc N-Channel Mosfet Transistor BUZ12A ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.035Ω(Max) ·SOA is Power Dissipation Limited ·High .

BUZ12 - Power Transistor (Siemens Semiconductor Group)
BUZ 12 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 12 VDS 50.

BUZ12 - N-Channel MOSFET Transistor (INCHANGE)
isc N-Channel Mosfet Transistor BUZ12 ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.028Ω(Max) ·SOA is Power Dissipation Limited ·High i.

BUZ10 - N-Channel Power MOSFET (STMicroelectronics)
® BUZ10 N - CHANNEL 50V - 0.06Ω - 23A TO-220 STripFET™ MOSFET T YPE BUZ 10 s s s s s V DSS 50 V R DS(o n) < 0.07 Ω ID 23 A TYPICAL RDS(on) = 0.0.

BUZ10 - Power Transistor (Siemens Semiconductor Group)
BUZ 10 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 10 VDS 50.

BUZ10 - N-Channel MOSFET (INCHANGE)
isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current –ID=23A@ TC=25℃ ·Static Drain-Source On-Resistance : RDS(on) = 0.07Ω(Max) ·175℃ operating te.

BUZ100 - Power Transistor (Siemens Semiconductor Group)
BUZ 100 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175°C operating temperat.

BUZ100 - N-Channel MOSFET (INCHANGE)
isc N-Channel Mosfet Transistor ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.018Ω(Max) ·Ultra low on-resistance ·Fast Switching ·175℃ o.

BUZ100L - Power Transistor (Siemens Semiconductor Group)
BUZ 100L SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Ultra low on-resistance • 175 °C op.