Datasheet4U Logo Datasheet4U.com

BUZ358 Datasheet - Siemens Semiconductor Group

BUZ358 Power Transistor

BUZ 358 SIPMOS ® Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 358 VDS 1000 V ID 4.5 A RDS(on) 2.6 Ω Package TO-218 AA Ordering Code C67078-S3111-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 4.5 Unit A ID IDpuls 18 TC = 25 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 5.1 .

BUZ358 Datasheet (68.27 KB)

Preview of BUZ358 PDF
BUZ358 Datasheet Preview Page 2 BUZ358 Datasheet Preview Page 3

Datasheet Details

Part number:

BUZ358

Manufacturer:

Siemens Semiconductor Group

File Size:

68.27 KB

Description:

Power transistor.

📁 Related Datasheet

BUZ35 Power Transistor (Siemens Semiconductor Group)

BUZ35 N-Channel MOSFET (INCHANGE)

BUZ350 Power Transistor (Siemens Semiconductor Group)

BUZ350 Power Transistor (Infineon Technologies AG)

BUZ351 Power Transistor (Siemens Semiconductor Group)

BUZ351 N-Channel Power MOSFET (Intersil Corporation)

BUZ353 Power Transistor (Siemens Semiconductor Group)

BUZ353 N-Channel MOSFET (STMicroelectronics)

TAGS

BUZ358 Power Transistor Siemens Semiconductor Group

BUZ358 Distributor