HYB3116405BJ-70 Datasheet, Edo-dynamic Ram, Siemens Semiconductor Group

3.3v 4m x 4-bit edo-dynamic ram

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HYB3116405BJ-70

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Siemens Semiconductor Group

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Description:

3.3v 4m x 4-bit edo-dynamic ram.

DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 6.

✔ HYB3116405BJ-70 Features

include single + 3.3 V (± 0.3 V) power supply, direct interfacing with high-performance logic device families.The HYB3116405BTL parts have a very low power „sleep mode“ s

📁 Related Datasheet

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HYB3116405BJ-60 - 4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Siemens Semiconductor Group)

HYB3116405BT-50 - 4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Siemens Semiconductor Group)

HYB3116405BT-60 - 3.3V 4M x 4-Bit EDO-Dynamic RAM (Siemens Semiconductor Group)

HYB3116405BT-70 - 3.3V 4M x 4-Bit EDO-Dynamic RAM (Siemens Semiconductor Group)

HYB3116405BTL-50 - 4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Siemens Semiconductor Group)

HYB3116405BTL-60 - 3.3V 4M x 4-Bit EDO-Dynamic RAM (Siemens Semiconductor Group)

HYB3116405BTL-70 - 3.3V 4M x 4-Bit EDO-Dynamic RAM (Siemens Semiconductor Group)

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HYB3116405BJ-70 3.3V 4-Bit EDO-Dynamic RAM Siemens Semiconductor Group

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✔ HYB3116405BJ-70 Features

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