SFH483 Datasheet, Emitter, Siemens Semiconductor Group

SFH483 Features

  • Emitter Highly efficient GaAlAs LED Anode is electrically connected to the case High pulse power High reliability DIN humidity category in acc. with DIN 40040 GQG q Same package as BPX 63, BP 1

PDF File Details

Part number:

SFH483

Manufacturer:

Siemens Semiconductor Group

File Size:

34.75kb

Download:

📄 Datasheet

Description:

Gaalas-ir-lumineszenzdiode gaalas infrared emitter. Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Rever

Datasheet Preview: SFH483 📥 Download PDF (34.75kb)
Page 2 of SFH483 Page 3 of SFH483

SFH483 Application

  • Applications q IR remote controls and sound transmission q Photointerrupter Gehäuse Package 18 A3 DIN 41870 (TO-18), Bodenplatte, klares EpoxyGießh

TAGS

SFH483
GaAlAs-IR-Lumineszenzdiode
GaAlAs
Infrared
Emitter
Siemens Semiconductor Group

📁 Related Datasheet

SFH480 - GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm (Siemens Semiconductor Group)
GaAlAs-IR-Lumineszenzdioden (880 nm) GaAlAs Infrared Emitters (880 nm) SFH 480 SFH 481 SFH 482 2.54mm spacing ø0.45 ø4.8 ø4.6 1 0.9 .1 Chip posi.

SFH481 - GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm (Siemens Semiconductor Group)
GaAlAs-IR-Lumineszenzdioden (880 nm) GaAlAs Infrared Emitters (880 nm) SFH 480 SFH 481 SFH 482 2.54mm spacing ø0.45 ø4.8 ø4.6 1 0.9 .1 Chip posi.

SFH482 - GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm (Siemens Semiconductor Group)
GaAlAs-IR-Lumineszenzdioden (880 nm) GaAlAs Infrared Emitters (880 nm) SFH 480 SFH 481 SFH 482 2.54mm spacing ø0.45 ø4.8 ø4.6 1 0.9 .1 Chip posi.

SFH483 - GaAlAs Infrared Emitter (OSRAM)
GaAlAs-Lumineszenzdiode GaAlAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant SFH 483 L/M E7800 Wesentliche Merkmale • Hergestellt im Schme.

SFH483E7800 - GaAlAs Infrared Emitter (OSRAM)
2007-12-07 GaAlAs Infrared Emitter GaAs-IR-Lumineszenzdiode Version 1.0 SFH 483 E7800 Features: • Fabricated in a liquid phase epitaxy process • Anod.

SFH484 - GaAIAs Infrared Emitters (Siemens Semiconductor Group)
GaAIAs-IR-Lumineszenzdioden (880 nm) GaAIAs Infrared Emitters (880 nm) SFH 484 SFH 485 Area not flat 0.6 0.4 2.54 mm spacing 0.8 0.5 9.0 8.2 7.8 7..

SFH485 - GaAIAs Infrared Emitters (Siemens)
GaAIAs-IR-Lumineszenzdioden (880 nm) GaAIAs Infrared Emitters (880 nm) SFH 484 SFH 485 Area not flat 0.6 9.0 8.2 0.4 7.8 7.5 Cathode 5.9 5.5 2.

SFH485P - GaAIAs Infrared Emitter (880 nm) (Siemens Semiconductor Group)
GaAIAs-IR-Lumineszenzdiode (880 nm) GaAIAs Infrared Emitter (880 nm) SFH 485 P Area not flat 0.6 0.4 2.54 mm spacing 0.8 0.4 5.0 4.2 Cathode 3.85 .

SFH486 - GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter 880 nm (Siemens Semiconductor Group)
GaAIAs-IR-Lumineszenzdiode (880 nm) GaAIAs Infrared Emitter (880 nm) SFH 486 Area not flat 0.6 0.4 2.54 mm spacing 0.8 0.4 9.0 8.2 7.8 7.5 ø5.1 ø4..

SFH4860 - GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm (Siemens Semiconductor Group)
GaAlAs-Lumineszenzdiode (660 nm) GaAlAs Light Emitting Diode (660 nm) SFH 4860 Chip position 2.54 mm spacing ø0.45 14.5 12.5 ø4.8 ø4.6 Cathode .

Stock and price

ams OSRAM Group
EMITTER IR 880NM 200MA TO-18
DigiKey
SFH-483-L-M-E7800
0 In Stock
0
Unit Price : $0
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts