SFH487 Datasheet - Siemens Semiconductor Group

SFH487 GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaβstrom Forward current Stoβstrom, τ ≤ 10 µs Surge current Verlustleistung Power dissipation Wärmewiderstand, freie Beinchenlänge max. 10 mm Thermal r.

GaAIAs-IR-Lumineszenzdiode (880nm) GaAIAs Infrared Emitter (880 nm) SFH 487 Area not flat 0.7 0.4 0.6 0.4 5.2 4.5 2.54 mm spacing 0.8 0.4 4.1 3.9 4.0 3.6 Approx. weight 0.3 g Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Hergestellt im Schmelzepitaxieverfahren q Hohe Zuverlässigkeit q Hohe Impulsbelastbarkeit q Gute spektrale Anpassung an Si-Fotoempfänger q Gehäusegleich mit SFH 309, SFH 409 Anwendungen q IR-Fernsteuerung .

SFH487 Features

* q Fabricated in a liquid phase epitaxy process q High reliability q High pulse handling capability q Good spectral match to silicon photodetectors q Same package as SFH 309, SFH 409 Applications q IR remote control for hifi and TV sets, video und Videogeräten, Lichtdimmern q Lichtschranken bis 500

SFH487 Datasheet (42.08 KB)

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Datasheet Details

Part number:

SFH487

Manufacturer:

Siemens Semiconductor Group

File Size:

42.08 KB

Description:

Gaaias-ir-lumineszenzdiode 880nm gaaias infrared emitter 880 nm.

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SFH487 GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 Siemens Semiconductor Group

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