SFH487P Datasheet - Siemens Semiconductor Group

SFH487P GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter 880 nm

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaβstrom Forward current Stoβstrom, τ ≤ 10 µs Surge current Verlustleistung Power dissipation Wärmewiderstand, freie Beinchenlänge max. 10 mm Thermal r.

GaAIAs-IR-Lumineszenzdiode (880 nm) GaAIAs Infrared Emitter (880 nm) SFH 487 P Area not flat 0.7 0.8 0.4 0.4 0.6 0.4 3.1 2.5 2.0 1.7 4.0 3.6 2.54 mm spacing ø3.1 ø2.9 1.8 1.2 29 27 4.5 4.0 Cathode 3.5 Chip position 0.6 0.4 Approx. weight 0.3 g Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q GaAIAs-IR-Lumineszenzdiode, hergestellt im Schmelzepitaxieverfahren q Hohe Zuverlässigkeit q Enge Toleranz: Chipoberfläche/ Bauteilober.

SFH487P Features

* q GaAIAs infrared emitting diode, fabricated in a liquid phase epitaxy process q High reliability q Small tolerance: Chip surface to case surface q High pulse handling capability q Good spectral match to silicon photodetectors q Plane surface q Same package as SFH 309 Applications q Photointerrupter

SFH487P Datasheet (38.80 KB)

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Datasheet Details

Part number:

SFH487P

Manufacturer:

Siemens Semiconductor Group

File Size:

38.80 KB

Description:

Gaaias-ir-lumineszenzdiode 880 nm gaaias infrared emitter 880 nm.

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SFH487P GaAIAs-IR-Lumineszenzdiode 880 GaAIAs Infrared Emitter 880 Siemens Semiconductor Group

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