SFH487P - GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter 880 nm

Siemens Semiconductor Group

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Datasheet Details

Part number	SFH487P
Manufacturer	Siemens Semiconductor Group
File Size	38.80 KB
Description	GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter 880 nm
Datasheet	SFH487P_SiemensSemiconductorGroup.pdf

SFH487P Product details

Description

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaβstrom Forward current Stoβstrom, τ ≤ 10 µs Surge current Verlustleistung Power dissipation Wärmewiderstand, freie Beinchenlänge max. 55 + 100 100 5 100 2.5 200 375 Einheit Unit °C °C V mA A mW K/W Top; Tstg Tj VR IF IFSM Ptot

Features

q GaAIAs infrared emitting diode, fabricated in a liquid phase epitaxy process q High reliability q Small tolerance: Chip surface to case surface q High pulse handling capability q Good spectral match to silicon photodetectors q Plane surface q Same package as SFH 309.

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Published: May 20, 2005 |