SFH485P - GaAIAs Infrared Emitter (880 nm)

Siemens Semiconductor Group

SFH485P Datasheet Preview — Preview of SFH485P PDF

Datasheet Details

Part number	SFH485P
Manufacturer	Siemens Semiconductor Group
File Size	45.76 KB
Description	GaAIAs Infrared Emitter (880 nm)
Datasheet	SFH485P_SiemensSemiconductorGroup.pdf

SFH485P Product details

Description

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, τ ≤ 10 µs Surge current Verlustleistung Power dissipation Wärmewiderstand, freie Beinchenlänge max.

Features

q GaAIAs infrared emitting diode, fabricated in a liquid phase epitaxy process q Small tolerance: Chip surface to case surface q Good spectral match to silicon photodetectors q Plane surface q Same package as SFH 217.

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Published: May 20, 2005 |