STS65R190L8AS2

650V SUPER JUNCTION MOS POWER TRANSISTOR

Silan Microelectronics

STS65R190L8AS2 Features

* 20A, 650V, RDS(on)(typ.)=0.155@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability

* 100% avalanche tested

* Pb-free lead plating

* RoHS compliant 123 TO-22

STS65R190L8AS2 General Description

2 STS65R190F(L8A)(T)(S)(D)S2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and.

STS65R190L8AS2 Datasheet (642.55 KB)

STS65R190L8AS2 Datasheet Preview — Preview of STS65R190L8AS2 PDF

Datasheet Details

Part number:

STS65R190L8AS2

Manufacturer:

Silan Microelectronics

File Size:

642.55 KB

Description:

650v super junction mos power transistor.

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STS65R190L8AS2 650V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

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STS65R190L8AS2 Features

STS65R190L8AS2 General Description

Datasheet Details

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STS65R190L8AS2 Distributor