STS65R190L8AS2, STS65R190FS2 Datasheet - Silan Microelectronics

STS65R190L8AS2 - 650V SUPER JUNCTION MOS POWER TRANSISTOR

2 STS65R190F(L8A)(T)(S)(D)S2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and.

STS65R190L8AS2 Features

* 20A, 650V, RDS(on)(typ.)=0.155@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability

* 100% avalanche tested

* Pb-free lead plating

* RoHS compliant 123 TO-22

STS65R190FS2-SilanMicroelectronics.pdf