* Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D SOT 26 Top View D D G 1 2 3 6 5 4 D D S G S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source V
STS6409
SamHop Microelectronics
102.05 KB
P-channel enhancement mode field effect transistor.
r re Pro
STS6409
Ver 1.0
S a mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω.
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