* Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package. D S OT 23 D S G S G ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a L
STS6N20
SamHop Microelectronics
86.26 KB
N-channel mosfet.
Gr Pr
STS6N20
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
60V
ID.
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