Description
Silan Microelectronics STS65R190F(L8A)(T)(S)(D)S2_Datasheet 20A, 650V SUPER JUNCTION MOS POWER TRANSISTOR .
2
STS65R190F(L8A)(T)(S)(D)S2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.
Features
* 20A, 650V, RDS(on)(typ. )=0.155@VGS=10V
* New revolutionary high voltage technology
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt rated
* High peak current capability
* 100% avalanche tested
* Pb-free lead plating
* RoHS compliant
123 TO-22